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在离子电子学研究中，发展低偏压、非注入型的载流子调控机制对于实现低损伤和高可逆器件具有重要意义. 本论文以缺氧态非晶WO3-X薄膜为模型体系，研究了低偏压条件下电解质/WO3-X界面处离子对薄膜内载流子分布的调控行为. 研究结果表明，在1.5 V偏压下，WO3-X薄膜呈现由正极端向负极端逐渐扩展的非均匀着色响应，并形成空间不均匀的载流子浓度分布，载流子浓度变化范围接近6个数量级. XPS和TOF-SIMS深度剖析结果显示，阳离子主要局限于薄膜表层，未表现出向薄膜内部持续推进的趋势. 这表明，该不均匀载流子分布并非由单纯电场作用或显著外来离子注入主导，而主要来源于电解质中离子在薄膜表面重排所形成的界面静电势调制. 该缺氧态WO3-X薄膜存在的低偏压下的非注入型载流子不均匀分布调控机制，可为低损伤、高可逆性的离子电子学器件设计提供新思路.
Abstract：In iontronic research， developing low-voltage， non-injection carrier regulation mechanisms is of great significance for realizing low-damage and highly reversible devices. In this work， oxygen-deficient amorphous WO3-X films were employed as a model system to investigate the regulation of carrier distribution in the films by ions at the electrolyte/WO3-X interface under low bias. The results show that， under an applied bias of 1.5 V， the WO3-X films exhibit a nonuniform coloration response that gradually propagates from the positive electrode side to the negative electrode side， accompanied by the formation of a spatially nonuniform carrier concentration distribution spanning nearly six orders of magnitude. XPS and TOF-SIMS depth profiling reveal that the cations are mainly confined to the near-surface region of the films and do not show a tendency to continuously penetrate into the film interior. These results indicate that the nonuniform carrier distribution is governed neither by a purely electric-field effect nor by significant foreign-ion injection， but mainly originates from interfacial electrostatic-potential modulation induced by the surface rearrangement of ions in the electrolyte. The low-voltage， non-injection regulation mechanism for nonuniform carrier distribution in oxygen-deficient WO3-X films revealed here may provide a new strategy for designing iontronic devices with low damage and high reversibility.
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基本信息:
中图分类号:TB383.2
引用信息:
[1]黎泽锐,普佳怡,李颖仪,等.缺氧态WO_(3-X)中载流子不均匀分布的静电调控机制[J].五邑大学学报(自然科学版)().
基金信息:
国家自然科学基金资助项目（22479116）
2026-04-21
2026-04-21
2026-04-21